QS5U27 transistor 1/3 small switching ( ? 20v, ? 1.5a) QS5U27 ! features 1) the QS5U27 conbines pch treueh mosfet with a schottky barrier diode in a single tsmt5 package. 2) pch treueh mosfet have a low on-state resisternce with a fast switching. 3) pch treueh mosfet is neucted a low voltage drive (2.5v). 4) the independently connected schottky barrier diode have a low forward voltage. ! applications load switch, dc/dc conversion ! external dimensions (units : mm) tsmt5 0~0.1 2.9 2.8 1.9 1.6 0.95 0.95 0.4 (1) (5) (3) (2) (4) 0.3~0.6 0.85 1.0max 0.7 0.16 each lead has same dimensions abbreviated symbol : u27 (1)gate (2)source (3)anode (4)cathode (5)drain ! structure ?silicon p-channel mos fet ?schottky barrier diode ! packaging specifications QS5U27 tr 3000 type package code taping basic ordering unit (pieces) ! equivalent circuit (1)gate (2)source (3)anode (4)cathode (5)drain ? 2 ? 1 (1) (2) (3) (5) (4) ? a protection diode has been buitt in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltages are exceeded. ? 1 esd protection diode ? 2 body diode ! absolute maximum ratings (ta=25 c) ? 1 ? 1 ? 3 ? 2 parameter v v dss symbol ? 20 v v gss 12 a i d 1.5 a i dp 6.0 a i s ? 0.75 a i sp ? 3.0 c tch 150 v v rm 25 v v r 20 a i f 1.0 a i fsm 3.0 c tj 125 p d 1.0 c tstg ? 40~ + 125 limits unit w / total ? 1 pw 10 s, duty cycle 1% ? 2 60hz ? 1cyc. ? 3 mounted on a ceramic board. drain-source voltage gate-source voltage drain current source current (body diode) channel temperature repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature total power dispation range of strage temperature continuous pulsed continuous pulsed < mosfet > parameter symbol limits unit < di > parameter symbol limits unit < mosfet and di >
QS5U27 transistor 2/3 ! ! ! ! electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 av gs = 12v, v ds =0v v dd ? 15 v v dd ? 15 v typ. max. unit conditions v (br) dss ? 20 ?? vi d = ? 1ma, v gs =0v i dss ??? 1 av ds = ? 20v, v gs =0v v gs (th) ? 0.7 ?? 2.0 v v ds = ? 10v, i d = ? 1ma ? 160 200 m ? i d = ? 1.5a, v gs = ? 4.5v r ds (on) ? 180 240 m ? i d = ? 1.5a, v gs = ? 4v ? 260 340 m ? i d = ? 0.75a, v gs = ? 2.5v 1.0 ?? sv ds = ? 10v, i d = ? 0.75a c iss ? 325 ? pf v ds = ? 10v c oss ? 60 40 ? pf v gs =0v c rss ? 10 ? pf f=1mhz t d (on) ? 10 ? ns i d = ? 0.75a t r ? 35 ? ns t d (off) ? 10 ? ns v gs = ? 4.5v t f ? 4.2 ? ns r l =20 ? q g ? 1.0 ? nc r gs =10 ? q gs ? 1.1 ? nc v gs = ? 4.5v q gd ?? nc i d = ? 1.5a ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-starte resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance tum-on delay time rise time tum-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ! ! ! ! body diode (source-drain) v sd ??? 1.2 v i s = ? 0.75a, v gs =0v v f ?? 0.45 v i f =1.0a i r ?? 200 av r =20v parameter symbol min. typ. max. unit conditions forward voltage reverse leakage < mosfet > parameter symbol min. typ. max. unit conditions forward voltage < di > ! ! ! ! electrical characteristic curves 0 0.5 1 1.5 2 2.5 3 3.5 4 gate-source voltage : ? v gs (v) fig.1 typical transfer characteristics 0.001 0.01 drain current : ? i d (a) 10 0.1 1 ta = 125 c ta = 25 c ta =? 25 c ta = 75 c v ds =? 10v pulsed 0.1 1 10 10 100 drain current : ? i d (a) fig.2 static drain-source on-state resistance vs. drain current ( ) 1000 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs =? 4.5v pulsed static drain-source on-state resistance : r ds (on) (m ? ) 0.1 1 10 10 100 drain current : ? i d (a) fig.3 static drain-source on-state resistance vs. drain current ( ? ) 1000 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs =? 4v pulsed static drain-source on-state resistance : r ds (on) (m ? ) 0.1 1 10 10 100 drain current : ? i d (a) fig.4 static drain-source on-state resistance vs. drain current ( ?? ) 1000 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs =? 2.5v pulsed static drain-source on-state resistance : r ds (on) (m ? ) 024681012 0 50 100 150 200 250 300 350 gate-source voltage : ? v gs ( v) fig.5 static drain-source on-state resistance vs. gate-source voltage 400 i d = ? 0.75a i d = ? 1.5a ta = 25 c pulsed static drain-source on-state resistance : r ds (on) (m ? ) 0.1 1 10 10 100 drain current : ? i d (a) 1000 v gs =? 2.5v v gs =? 4.0v v gs =? 4.5v ta = 25 c pulsed static drain-source on-state resistance : r ds (on) (m ? ) fig.6 static drain-source on-state resistance vs. drain current ( )
QS5U27 transistor 3/3 0 0.5 1 1.5 2 0.01 0.1 1 source-drain voltage : ? v sd (v) fig.7 reverse drain current vs. source-drain current reverce drain current : ? i dr (a) 10 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs = 0v pulsed 0.01 0.1 1 10 100 10 100 1000 drain-source voltage : ? v ds (v) fig.8 typical capacitance vs. drain-source voltage capacitance : c (pf) 10000 c iss c oss c rss ta=25 c f=1mh z v gs =0v 0.01 0.1 1 10 1 10 100 drain current : ? i d (a) fig.9 switching characteristics switching time : t (ns) 1000 t d(off) t r t d(on) t f ta=25 c v dd = ? 15v v gs = ? 4.5v r g =10 ? pulsed 024 1356 0 1 2 3 4 5 6 7 total gate charge : qg (nc) fig.10 dynamic input characteristics gate-source voltage : v gs (v) 8 ta=25 c v dd = ? 15v i d = ? 1.5a r g =10 ? pulsed ! ! ! ! measurement circuits fig.11 switching time measurement circuit fig.12 switching waveforms fig.13 gate charge measurement circuit fig.14 gate charge waveforms v gs r g v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) t r t d(off) v gs i g(const) r g v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd
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